imx9 transistors general purpose transistor (isolated dual transistors) imx9 z z z z features 1) two 2sd2114k chips in a smt package. 2) mounting possible with smt3 automatic mounting machine. 3) transistor elements are independent, eliminating interference. 4) mounting cost and area can be cut in half. z z z z structure epitaxial planar type npn silicon transistor the following characteristics apply to both tr 1 and tr 2 . z z z z external dimensions (units : mm) rohm : smt6 eiaj : sc-74 abbreviated symbol: x9 (1) (2) (3) 0.3 +0.1 ?0.05 1.6 2.80.2 +0.2 ?0.1 (6) (5) (4) 0.95 0.95 1.90.2 2.90.2 1.1 +0.2 0.80.1 ?0.1 0~0.1 0.3~0.6 0.15 ?0.06 +0.1 all terminals have same dimensions z z z z absolute maximum ratings (ta = 25 c) z z z z equivalent circuit parameter symbol limits unit v cbo 25 v v ceo 20 v v ebo 12 v i c 500 ma tj 150 c tstg ?55~+150 c pd 300(total) mw ? collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature power dissipation ? 200mw per element must not be exceeded. tr 2 tr 1 (4) (5) (6) (3) (2) (1) z z z z electrical characteristics (ta = 25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) min. 25 20 12 ? ? 560 ? ? ? ? ? ? ? 0.18 ? ? ? 0.5 0.5 2700 0.4 v i c =10a i c =1ma i e =10a v cb =20v v eb =10v v ce =3v, i c =10ma i c /i b =500ma/20ma v v a a ? v typ. max. unit conditions f t ron cob ? ? ? 350 0.8 8 ? ? ? v ce =10v, i e =? 50ma, f=100mhz i b =1ma, v i =100mvrms, f=1khz v cb =10v, i e =0a, f=1mhz mhz ? pf collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency output capacitance output on-resistance collector-emitter saturation voltage
imx9 transistors z z z z packaging specifications imx9 part no. t110 3000 packaging type code basic ordering unit (pieces) taping z z z z electrical characteristic curves 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.2 0.3 0.4 0.5 ta=25c 0.2a 0.4a 0.6a 0.8a 1.0a 1.2a 1.4a 1.6a i b =0 1.8a 2.0a collector current : i c (ma) collector to emitter voltage : v ce (v) fig.1 grounded emitter output characteristics() 0 200 400 600 800 1000 0246810 ta=25c measured using pulse current. 0.2ma 0.4ma 0.6ma 0.8ma 1.0ma 1.2ma 1.4ma 1.6ma 1.8ma 2.0ma i b =0ma collector current : i c (ma) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics (?) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 2 5 10 20 50 100 200 500 1000 collector current : i c (ma) base to emitter voltage : v be (v) fig.3 grounded emitter propagation characteristics v ce = 3v measured using pulse current. 25c ?25c ta=100c 1 2 5 10 20 50 100 200 500 1000 10 20 50 100 200 500 1000 2000 5000 10000 ta=25c measured using pulse current. dc current gain : h fe collector current : i c (ma) fig.4 dc current gain vs. collector current ( ) 3v v ce = 5v 1v 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 50 20 10 v ce = 3v measured using pulse current. dc current gain : h fe collector current : i c (ma) fig.5 dc current gain vs. collector current (?) 25c ?25c ta=100c 1 2 2000 1000 200 500 100 20 50 10 5 2 5 10 20 50 100 200 500 1000 ta=25c measured using pulse current. 10 25 50 i c /i b = 100 collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) fig.6 collector-emitter saturation voltage vs. collector current ()
imx9 transistors collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) fig.7 collector-emitter saturation voltage vs. collector current (?) 1 2 2000 1000 200 500 100 20 50 10 5 2 5 10 20 50 100 200 5001000 i c / i b = 25 measured using pulse current. ta=100c 25c ?25c base saturation voltage : v be(sat) (mv) collector current : i c (ma) fig.8 base-emitter saturation voltage vs. collector current () 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 50 20 10 ta = 25c pulsed i c /i b =10 25 50 100 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 50 20 10 base saturation voltage : v be(sat) (mv) collector current : i c (ma) fig.9 base-emitter saturation voltage vs. collector current (?) measured using pulse current. l c /l b =10 25c 100c ta=?25c emitter current : i e (ma) transition frequency : f t (mhz) fig.10 gain bandwidth product vs. emitter current ?1 ?2 ?5 ?10 ?20 ?50 ? 100 ? 200 ? 500 ? 1000 10000 5000 2000 500 200 1000 100 20 50 10 ta=25c v ce =10v measured using pulse current. 0.1 0.2 0.5 1 2 5 10 20 50 100 collector output capacitance : cob (pf) collector to base voltage : v cb (v) fig.11 collector output capacitance vs. collector-base voltage 100 200 500 1000 10 20 50 2 5 1 ta=25c f=1mhz i e =0a 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 on resistance : ron (?) base current : i b (ma) fig.12 output-on resistance vs. base current 0.1 0.2 0.5 1 2 5 10 20 50 100 ta=25c f=1khz vi=100mv( rms) r l =1k? z z z z ron measurement circuit ron= r l v 0 vi-v 0 r l =1k? i b output v 0 input vi 1khz 100mv(rms) v
appendix appendix1-rev1.0 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document use silicon as a basic material. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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